Interfacial Electrical Properties of Ion-Beam Sputter Deposited Amorphous Carbon on Silicon

Authors

A. Azim Khan, University of Nebraska-Lincoln
John A. Woollam, University of Nebraska-LincolnFollow
Y. Chung, Universal Energy Systems, Dayton, OH
B. Banks, NASA Lewis Research Center, Cleveland, OH

Document Type

Article

Date of this Version

5-6-1983

Comments

Published in IEEE Electron Device Letters, Vol. EDL-4, No. 5 May 1983 Copyright 1983 IEEE. Used by permission.

Abstract

Amorphous, “diamond-like” Carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined, and the density of interface states is unusually low for an as yet unoptimized