Fast growth of graphene patterns by laser direct writing

Authors

J. B. Park, University of Nebraska-Lincoln
W. Xiong, University of Nebraska-Lincoln
Y. Gao, University of Nebraska-Lincoln
M. Qian, University of Nebraska-LincolnFollow
Z. Q. Xie, University of Nebraska-Lincoln
M. Mitchell, University of Nebraska-Lincoln
Y. S. Zhou, University of Nebraska-LincolnFollow
G. H. Han, Sungkyunkwan University
L. Jiang, Beijing Institute of Technology
Yongfeng Lu, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2011

Citation

APPLIED PHYSICS LETTERS 98, 123109 (2011); doi:10.1063/1.3569720

Comments

Copyright 2011 American Institute of Physics

Abstract

Rapid single-step fabrication of graphene patterns was developed using laser-induced chemical vapor deposition (LCVD). A laser beam irradiates a thin nickel foil in a CH₄ and H₂ environment to induce a local temperature rise, thereby allowing the direct writing of graphene patterns in precisely controlled positions at room temperature. Line patterns can be achieved with a single scan without pre- or post-processes. Surprisingly, the growth rate is several thousand times faster than that of general CVD methods. The discovery and development of the LCVD growth process provide a route for the rapid fabrication of graphene patterns for various applications.