Electrical & Computer Engineering, Department of
Document Type
Article
Date of this Version
1-1-1998
Abstract
Dopant profiles were determined by ex situ Fourier transform infrared variable-angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. The noncontact, nondestructive nature of the measurement suggests both ex situ and in situ monitoring and control applications. In this study, the carrier profiles were modeled as graded multilayers that can be constrained to a given functional form (Gaussian, erfc, etc.) when desired. Boron and arsenic implanted silicon wafers that were rapid thermal anneal and furnace annealed were measured and compared to spreading resistance probe data.
Comments
Published in J. Vac. Sci. Technol. B 16(„1), Jan/Feb 1998. ©1998 American Vacuum Society. Used by permission.