Electrical and Computer Engineering, Department of
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Document Type
Article
Date of this Version
7-16-2014
Citation
092502-2 P. Sutter and E. Sutter APL Mater. 2, 092502 (2014) Pages 1-8
Abstract
We assess scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) for thickness measurements on few-layer hexagonal boron nitride (h-BN), the layered dielectric of choice for integration with graphene and other two-dimensional materials. Observations on h-BN islands with large, atomically flat terraces show that the secondary electron intensity in SEM reflects monolayer height changes in films up to least 10 atomic layers thickness. From a quantitative analysis of AES data, the energy-dependent electron escape depth in h-BN films is deduced. The results show that AES is suitable for absolute thickness measurements of few-layer h-BN of 1 to 6 layers.
Comments
© 2014 Author(s).