Electrical & Computer Engineering, Department of
Date of this Version
5-20-2014
Citation
United States Patent No.: US 8,728,433 B2 May 20, 2014
Abstract
A method of forming and processing of graphene is disclosed based on exposure and selective intercalation of the partially graphene-covered metal Substrate with atomic or molecular intercalation species such as oxygen (O) and nitrogen oxide (NO). The process of intercalation lifts the strong metal carbon coupling and restores the characteristic Dirac behav ior of isolated monolayer graphene. The interface of graphene with metals or metal-decorated substrates also provides for controlled chemical reactions based on novel functionality of the confined space between a metal Surface and a graphene sheet.
COinS
Comments
US govt doc. Public Domain