Mechanical and Materials Engineering, Department of
Department of Mechanical and Materials Engineering: Faculty Publications
Accessibility Remediation
If you are unable to use this item in its current form due to accessibility barriers, you may request remediation through our remediation request form.
ORCID IDs
https://orcid.org/0000-0002-2423-0463 Natale Ianno
Document Type
Article
Date of this Version
1-2018
Citation
J. Vac. Sci. Technol. B 36(1), Jan/Feb 2018, #01-1207, 6 pp
DOI 10.1116/1.5008999
Abstract
The impact of neutron irradiation, in the energy range of ~0.025 eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B10C2+xHy) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B10C2+xHy via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B10C2+xHy heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of 10B. There is also increased charge carrier lifetime of more than 200% with modest neutron irradiation of approximately 2.7×108 to 1.08×109 neutrons/cm2.
Included in
Mechanics of Materials Commons, Nanoscience and Nanotechnology Commons, Other Engineering Science and Materials Commons, Other Mechanical Engineering Commons
Comments
Published by the AVS. Used by permission.