Mechanical & Materials Engineering, Department of


ORCID IDs Natale Ianno

Date of this Version



J. Vac. Sci. Technol. B 36(1), Jan/Feb 2018, #01-1207, 6 pp

DOI 10.1116/1.5008999


Published by the AVS. Used by permission.


The impact of neutron irradiation, in the energy range of ~0.025 eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B10C2+xHy) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B10C2+xHy via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B10C2+xHy heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of 10B. There is also increased charge carrier lifetime of more than 200% with modest neutron irradiation of approximately 2.7×108 to 1.08×109 neutrons/cm2.