Electrically controlled exchange bias for spintronic applications

Authors

• Christian Binek, University of Nebraska-LincolnFollow
• A. Hochstrat, Angewandte Physik, University Duisburg-Essen, Duisburg, Germany
• X. Chen, Angewandte Physik, University Duisburg-Essen, Duisburg, Germany
• Pavel Borisov, Universität Duisburg-EssenFollow
• Wolfman Kleemann, Angewandte Physik, University Duisburg-Essen, Duisburg, GermanyFollow
• Bernard Doudin, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

5-4-2005

Comments

Published by American Institute of Physics. ©2005. Permission to use. J. Appl. Phys. 97, 10C514 (2005). http://www.jap.aip.org.

Abstract

Exchange coupling between a magnetoelectric (111)-oriented Cr₂O₃ single crystal and a CoPt multilayer with perpendicular anisotropy exhibits an exchange bias field proportional to the applied axial electric field. Extrapolation from bulk to thin film magnetoelectric pinning system suggests promising spintronic applications due to coupling between the electric field-controlled magnetization and the magnetization of a neighbor ferromagnetic layer. Pure voltage control of magnetic configurations of tunneling magnetoresistance spin valves is an attractive alternative to current-induced magnetization switching. ©2005 American Institute of Physics