Spin relaxation time dependence on optical pumping intensity in GaAs:Mn

Authors

V. Burobina, University of Utah
Christian Binek, University of Nebraska-LincolnFollow

Date of this Version

4-30-2014

Citation

JOURNAL OF APPLIED PHYSICS 115, 163909 (2014). http://dx.doi.org/10.1063/1.4874218

Comments

Copyright (c) 2014 American Institute of Physics. Used by permission.

Abstract

We analyze the dependence of electron spin relaxation time on optical pumping intensity in a partially compensated acceptor semiconductor GaAs:Mn using analytic solutions for the kinetic equations of the charge carrier concentrations. Our results are applied to previous experimental data of spin-relaxation time vs. excitation power for magnetic concentrations of approximately 10¹⁷ cm^-3 . The agreement of our analytic solutions with the experimental data supports the mechanism of the earlier-reported atypically long electron-spin relaxation time in the magnetic semiconductor.