Resonant photoemission of rare earth doped GaN thin films

Authors

S. R. McHale, Air Force Institute of TechnologyFollow
J. W. McClory, Air Force Institute of TechnologyFollow
J. C. Petrosky, Air Force Institute of TechnologyFollow
J. Wu, University of Puerto Rico
R. Palai, University of Puerto Rico
Yaroslav B. Losovyj, Louisiana State University at Baton RougeFollow
Peter A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

2011

Citation

Eur. Phys. J. Appl. Phys. 56, 11301 (2011); doi: 10.1051/epjap/2011110235

Comments

Copyright © 2011 EDP Sciences. Used by permission.

Abstract

The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5–6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f¹⁴ occupancy.