Schottky barrier formation at the Au to rare earth doped GaN thin film interface

Authors

• S. R. McHale, Air Force Institute of TechnologyFollow
• J. W. McClory, Air Force Institute of TechnologyFollow
• J. C. Petrosky, Air Force Institute of TechnologyFollow
• J. Wu, University of Puerto Rico
• R. Palai, University of Puerto Rico
• Yaroslav B. Losovyj, Louisiana State University at Baton RougeFollow
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2011

Citation

Eur. Phys. J. Appl. Phys. 55, 31301 (2011); DOI: 10.1051/epjap/2011110082

Comments

Copyright © 2011 EDP Sciences. Used by permission.

Abstract

The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.