Department of Physics and Astronomy: Publications and Other Research
Date of this Version
2011
Citation
Eur. Phys. J. Appl. Phys. 55, 31301 (2011); DOI: 10.1051/epjap/2011110082
Abstract
The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.
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Comments
Copyright © 2011 EDP Sciences. Used by permission.