Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS₂

Authors

• Zhiyong Xiao, University of Nebraska-LincolnFollow
• Jingfeng Song, University of Nebraska-LincolnFollow
• David K. Ferry, Arizona State UniversityFollow
• Stephen Ducharme, University of Nebraska-LincolnFollow
• Xia Hong, University of Nebraska–LincolnFollow

Document Type

Article

Date of this Version

6-2017

Citation

Physical Review Letters 118: 236801 (2017).

doi: 10.1103/PhysRevLett.118.236801

Comments

Copyright © 2017 American Physical Society. Used by permission.

Abstract

We exploit scanning-probe-controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS₂ between a transistor and a junction state. In the presence of a domain wall, MoS₂ exhibits rectified I-V characteristics that are well described by the thermionic emission model. The induced Schottky barrier height Φ^eff_B varies from 0.38 to 0.57 eV and is tunable by a SiO₂ global back gate, while the tuning range of Φ^eff_B depends sensitively on the conduction-band-tail trapping states. Our work points to a new route to achieving programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.