"Electrical Control of Photoluminescence Wavelength from Semiconductor " by Rafal Korlacki, Ravi F. Saraf et al.

Department of Physics and Astronomy: Publications and Other Research

 

Document Type

Article

Date of this Version

10-2011

Citation

Applied Physics Letters (2011) 99: 153112

doi: 10.1063/1.3651322

Comments

Copyright 2011, American Institute of Physics. Used by permission

Abstract

We report controllable tuning of the room temperature photoluminescence band of CdSe semiconductor quantum dots embedded in thin films of ferroelectric copolymer of vinylidene fluoride and trifluoroethylene made by Langmuir-Blodgett deposition. The high breakdown strength of the polymer permits the application of electric fields of up to 400 MV/m and results in a shift in the photoluminescence peak by up to 9 nm, nearly half the fluorescence band width. Moreover, we found that at these high electric fields, the Stark effect exhibits unusual fourth power dependence.

Included in

Physics Commons

Share

COinS