Electrical control of photoluminescence wavelength from semiconductor quantum dots in a ferroelectric polymer matrix

Authors

Rafal Korlacki, University of Nebraska-LincolnFollow
Ravi F. Saraf, University of Nebraska-LincolnFollow
Stephen Ducharme, University of Nebraska-LincolnFollow

Date of this Version

10-2011

Comments

Published in APPLIED PHYSICS LETTERS 99, 153112 (2011); doi:10.1063/1.3651322 Copyright 2011 American Institute of Physics. Used by permission.

Abstract

We report controllable tuning of the room temperature photoluminescence band of CdSe semiconductor quantum dots embedded in thin films of ferroelectric copolymer of vinylidene fluoride and trifluoroethylene made by Langmuir-Blodgett deposition. The high breakdown strength of the polymer permits the application of electric fields of up to 400 MV/m and results in a shift in the photoluminescence peak by up to 9 nm, nearly half the fluorescence band width. Moreover, we found that at these high electric fields, the Stark effect exhibits unusual fourth power dependence.