Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film

Authors

Timothy J. Reece, University of Nebraska-LincolnFollow
Stephen Ducharme, University of NebraskaFollow
A.V. Sorokin, University of Nebraska - Lincoln
Matt Poulsen, University of Nebraska-LincolnFollow

Date of this Version

1-6-2003

Comments

Published by American Institute of Physics. Applied Physics Letters 82, 142-44 (2003). ©2003 American Institute of Physics. Permission to use. Journal home page = http://jap.aip.org/jap/.

Abstract

We report the operation of a potential nonvolatile bistable capacitor memory element consisting of a metal gate, a 170 nm thick ferroelectric Langmuir–Blodgett film of vinylidene fluoride (70%) with trifluoroethylene (30%) copolymer, and a 100 nm thick silicon-oxide insulating layer, all deposited on an n-type silicon semiconductor substrate. The device exhibited clear capacitance hysteresis as the gate voltage was cycled between ±25 V, with a capacitance dynamic range of 8:1 and threshold voltage shift of 2.8 V. The results are in good agreement with the model of Miller and McWhorter [J. Appl. Phys. 72, 5999 (1992)].