Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering

Authors

K. Zou, The Pennsylvania State University
X. Hong, University of Nebraska–LincolnFollow
D. Keefer, Beloit College
J. Zhu, The Pennsylvania State University

Date of this Version

2010

Document Type

Article

Citation

PRL 105, 126601

Comments

Used by permission.

Abstract

We demonstrate atomic layer deposition of high-quality dielectric HfO₂ films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO₂-covered graphene samples reaches 20 000 cm²/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO₂ substrate and the HfO₂ overlayer are isolated. At 300 K, surface phonon modes of the HfO₂ film centered at 54 meV limit the mobility to approximately 20 000 cm²/Vs.