High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

Authors

X. Hong, University of Nebraska–LincolnFollow
A. Posadas, Yale University
K. Zou, The Pennsylvania State University
C. H. Ahn, Yale University
J. Zhu, The Pennsylvania State University

Date of this Version

2009

Document Type

Article

Citation

PRL 102, 136808

Comments

Used by permission.

Abstract

The carrier mobility μ of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO₂ substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0:8)O₃ (PZT). In the electron-only regime of the FLG, μ reaches 7 X 10⁴ cm² / Vs at 300 K for n = 2.4 X 10¹²=cm², 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4 X 10⁵ cm² / Vs at low temperature. The temperature-dependent resistivity p(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D = 7.8 ± 0.5 eV.