High-mobility Few-layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

Authors

• X. Hong, University of Nebraska–LincolnFollow
• A. Posadas, Yale University
• K. Zou, Pennsylvania State University
• C. H. Ahn, Yale UniversityFollow
• J. Zhu, Pennsylvania State University

Document Type

Article

Date of this Version

2009

Citation

Physical Rreview Letters (2009) 102: 136808

Comments

Used by permission

Abstract

The carrier mobility μ of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO₂ substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0:8)O₃ (PZT). In the electron-only regime of the FLG, μ reaches 7 X 10⁴ cm² / Vs at 300 K for n = 2.4 X 10¹²=cm², 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4 X 10⁵ cm² / Vs at low temperature. The temperature-dependent resistivity p(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D = 7.8 ± 0.5 eV.