Deposition of High-quality HfO₂ on Graphene and the Effect of Remote Oxide Phonon Scattering

Authors

• K. Zou, Pennsylvania State University
• X. Hong, University of Nebraska–LincolnFollow
• D. Keefer, Beloit College
• J. Zhu, Pennsylvania State University

Document Type

Article

Date of this Version

2010

Citation

Physical Review Letters (2010) 105: 126601

Comments

Used by permission

Abstract

We demonstrate atomic layer deposition of high-quality dielectric HfO₂ films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO₂-covered graphene samples reaches 20 000 cm²/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO₂ substrate and the HfO₂ overlayer are isolated. At 300 K, surface phonon modes of the HfO₂ film centered at 54 meV limit the mobility to approximately 20 000 cm²/Vs.