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Xia Hong Publications
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Document Type
Article
Date of this Version
2006
Citation
Journal of Applied Physics (2006) 99: 08R701
Abstract
We suggest a type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than the currently developed MRAM that is based on magnetoresistance tunnel junctions, with the tunnel junction structure being replaced by a single-layer film.
COinS
Comments
Used by permission