Planar Hall-effect magnetic random access memory

Authors

Y. Bason, Bar Ilan UniversityFollow
L. Klein, Bar Ilan University
J. -B. Yau, Yale University
X. Hong, University of Nebraska–LincolnFollow
J. Hoffman, Yale University
C. H. Ahn, Yale University

Date of this Version

2006

Document Type

Article

Citation

J. Appl. Phys. 99, 08R701

Comments

Used by permission.

Abstract

We suggest a type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than the currently developed MRAM that is based on magnetoresistance tunnel junctions, with the tunnel junction structure being replaced by a single-layer film.