Anisotropic magnetoresistance in colossal magnetoresistive La1−xSrxMnO3 thin films

Authors

Jeng-Bang Yau, Yale University
X. Hong, University of Nebraska–LincolnFollow
A. Posadas, Yale University
C. H. Ahn, Yale University
W. Gao, Yale University
E. Altman, Yale University
Y. Bason, Bar Ilan University
L. Klein, Bar Ilan University
M. Sidorov, Advanced Micro Devices
Z. Krivokapic, Advanced Micro Devices

Date of this Version

2007

Document Type

Article

Citation

J. Appl. Phys. 102, 103901

Comments

Used by permission.

Abstract

We report on magnetic field and temperature-dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La_1−xSr_xMnO₃ (LSMO) thin films. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases the AMR, we find that in LSMO films the AMR dependence on magnetization displays nonmonotonic behavior which becomes particularly pronounced in lightly doped compounds. We believe that this behavior is related to the inhomogeneity exhibited by these materials.