Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La0.7Ca0.3MnO3

Authors

N. Naftalis, Bar-Ilan University, IsraelFollow
Y. Bason, Bar-Ilan University, Israel
J. Hoffman, Yale University
X. Hong, University of Nebraska–LincolnFollow
C. H. Ahn, Yale University
L. Klein, Bar-Ilan University, Israel

Date of this Version

2009

Document Type

Article

Citation

J. Appl. Phys. 106, 023916

Comments

Used by permission.

Abstract

We measured the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a [001] oriented epitaxial thin film of La_0.7Ca_0.3MnO₃ (LCMO) as a function of magnetic field, temperature, and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the film symmetry.