Planar Hall effect in epitaxial thin films of magnetite

Authors

Y. Bason, Bar Ilan UniversityFollow
L. Klein, Bar Ilan University
H. Q. Wang, Yale University
J. Hoffman, Yale University
X. Hong, University of Nebraska–LincolnFollow
V. E. Henrich, Yale University
C. H. Ahn, Yale University

Date of this Version

2007

Document Type

Article

Citation

J. Appl. Phys. 101, 09J507

Comments

Used by permission.

Abstract

We measured the planar Hall effect (PHE) of magnetite (Fe₃O₄) films between 150 and 350 K. The PHE was measured both with a constant magnetic field rotating in the plane of the sample and in a remanent state after applying a field in specific directions. The PHE amplitude decreases with temperature; however, it changes little between 300 and 350 K. The remanent PHE signal is as high as 10 V/A, larger than previously observed in manganite films. We also measured the PHE in the remanent state and found that its magnitude and stability make it a viable candidate for magnetic random access memory applications.