Planar Hall Effect in Epitaxial Thin Films of Magnetite

Authors

• Y. Bason, Bar Ilan UniversityFollow
• L. Klein, Bar Ilan UniversityFollow
• H. Q. Wang, Yale University
• J. Hoffman, Yale University
• X. Hong, University of Nebraska–LincolnFollow
• V. E. Henrich, Yale University
• C. H. Ahn, Yale UniversityFollow

Document Type

Article

Date of this Version

2007

Citation

Journal of Applied Physics (2007) 101: 09J507

Comments

Used by permission

Abstract

We measured the planar Hall effect (PHE) of magnetite (Fe₃O₄) films between 150 and 350 K. The PHE was measured both with a constant magnetic field rotating in the plane of the sample and in a remanent state after applying a field in specific directions. The PHE amplitude decreases with temperature; however, it changes little between 300 and 350 K. The remanent PHE signal is as high as 10 V/A, larger than previously observed in manganite films. We also measured the PHE in the remanent state and found that its magnitude and stability make it a viable candidate for magnetic random access memory applications.