Date of this Version
PRL 102, 136808
The carrier mobility μ of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0:8)O3 (PZT). In the electron-only regime of the FLG, μ reaches 7 X 104 cm2 / Vs at 300 K for n = 2.4 X 1012=cm2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4 X 105 cm2 / Vs at low temperature. The temperature-dependent resistivity p(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D = 7.8 ± 0.5 eV.