Ferromagnetic properties of epitaxial manganite films on SrTiO₃/Si heterostructures

Authors

Aswini K. Pradhan, Center for Materials Research, Norfolk State UniversityFollow
J.B. Dadson, Norfolk State University, Norfolk, Virginia
D. Hunter, Norfolk State University, Norfolk, Virginia
K. Zhang, Norfolk State University, Norfolk, Virginia
S. Mohanty, Norfolk State University, Norfolk, Virginia
E.M. Jackson, Norfolk State University, Norfolk, Virginia
B. Lasley-Hunter, Norfolk State University, Norfolk, Virginia
K. Lord, Norfolk State University, Norfolk, Virginia
T.M. Williams, Norfolk State University, Norfolk, Virginia
Rakhim R. Rakhimov, Center for Materials Research, Norfolk State UniversityFollow
Jun Zhang, University of Nebraska - LincolnFollow
David J. Sellmyer, University of Nebraska-LincolnFollow
K. Inaba, University of Tokyo, Tokyo, Japan
T. Hasewaga, University of Tokyo, Tokyo, Japan
S. Mathews, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, Orissa, India
B. Joseph, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, Orissa, India
B.R. Sekhar, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, Orissa, India
U.N. Roy, Fisk University, Nashville, Tennessee
Y. Cui, Fisk University, Nashville, Tennessee
A. Burger, Fisk University, Nashville, Tennessee

Date of this Version

8-3-2006

Comments

Published by American Institute of Physics. J. Applied Physics 100, 033903 2006. ©2006 American Institute of Physics. Permission to use. http://jap.aip.org/jap/.

Abstract

We report on the magnetic properties of epitaxial La_0.7Ba_0.3MnO₃ and La_0.7Sr_0.3MnO₃ films on Si (100) and Si (111) substrates using SrTiO₃ template layer, which demonstrate magnetic and electrical properties at and above room temperature. The magnetization data show magnetic transition and magnetic hysteresis at and above room temperature. The films show well-defined magnetic domains. The ferromagnetic resonance studies show anisotropic effects related to ferromagnetic properties of films. The smaller grain size of about 20 nm in manganite films on SrTiO₃ /Si may be one of the reasons to minimize the strain effect through strain relaxation at the interface between SrTiO₃and manganites through the formation of three-dimensional islands.