Oxide-based dilute ferromagnetic semiconductors: ZnMnO and Co:TiO₂

Authors

Aswini K. Pradhan, Center for Materials Research, Norfolk State UniversityFollow
D. Hunter, Center for Materials Research, Norfolk State University, Norfolk, Virginia
B. Lasley-Hunter, Center for Materials Research, Norfolk State University, Norfolk, Virginia
J.B. Dadson, Center for Materials Research, Norfolk State University, Norfolk, Virginia
Kai Zhang, Center for Materials Research, Norfolk State University, Norfolk, Virginia
Rakhim R. Rakhimov, Center for Materials Research, Norfolk State UniversityFollow
Jun Zhang, University of Nebraska - LincolnFollow
David J. Sellmyer, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

4-15-2006

Comments

Published by American Institute of Physics. J. Applied Physics 99, 08M108 (2006). ©2006 American Institute of Physics. Permission to use. http://jap.aip.org/jap/.

Abstract

We report on ferromagnetic properties of ZnMnO and Co:TiO₂ films grown by pulsed laser deposition with varying growth conditions. We have demonstrated that ZnMnO films show ferromagnetic properties at room temperature. However, oxygen plays a dominant role in the occurrence of ferromagnetism. Introducing carriers into ZnMnO films did not improve the ferromagnetic properties. Our experimental results indicate that the mechanism for ferromagnetism lies, probably, within the perspective of charge transfer between Mn ions through oxygen. On the other hand, our experimental results suggest that the ferromagnetism in Co:TiO₂ films is controlled by the presence of small metal Co²⁺ clusters in the rutile TiO₂ matrix, which are mainly present at the interface and on the surface of the films.