Nonvolatile voltage controlled molecular spin state switching

Authors

G. Hao, University of Nebraska - LincolnFollow
A. Mosey, Indiana University - Purdue University, Indianapolis
X. Jiang, University of Nebraska - LincolnFollow
A. J. Yost, University of Nebraska - LincolnFollow
K. R. Sapkota, Sandia National Laboratories
G. T. Wang, Sandia National Laboratories
X. Zhang, University of Nebraska - Lincoln
J. Zhang, University of Nebraska-LincolnFollow
A. T. N'Diaye, Lawrence Berkeley National Laboratory
R. Cheng, Indiana University - Purdue University, Indianapolis
X. Xu, University of Nebraska-LincolnFollow
P. A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

2019

Document Type

Article

Citation

Appl. Phys. Lett. 114, 032901 (2019)

Comments

Used by permission.

Abstract

Voltage-controlled room temperature isothermal reversible spin crossover switching of [Fe{H₂B(pz)₂}₂(bipy)] thin films is demonstrated. This isothermal switching is evident in thin film bilayer structures where the molecular spin crossover film is adjacent to a molecular ferroelectric. The adjacent molecular ferroelectric, either polyvinylidene fluoride hexafluoropropylene or croconic acid (C₅H₂O₅), appears to lock the spin crossover [Fe{H₂B(pz)₂}₂(bipy)] molecular complex largely in the low or high spin state depending on the direction of ferroelectric polarization. In both a planar two terminal diode structure and a transistor structure, the voltage controlled isothermal reversible spin crossover switching of [Fe{H₂B(pz)₂}₂(bipy)] is accompanied by a resistance change and is seen to be nonvolatile, i.e., retained in the absence of an applied electric field. The result appears general, as the voltage controlled nonvolatile switching can be made to work with two different molecular ferroelectrics: croconic acid and polyvinylidene fluoride hexafluoropropylene.